FKN2609

FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKN2609 P-Ch 20V Fast Switching MOSFETs Product Summary BVDSS -20V RDSON 75mΩ ID -3.1A Description The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Parameter Thermal Resistance Jun...