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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKN3113
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 40mΩ
ID -4.2A
Description
The FKN3113 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3113 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction.