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FKN3113 Dataheets PDF



Part Number FKN3113
Manufacturers FETek
Logo FETek
Description P-Channel MOSFET
Datasheet FKN3113 DatasheetFKN3113 Datasheet (PDF)

FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKN3113 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 40mΩ ID -4.2A Description The FKN3113 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3113 meet the RoHS and Green Product requirement with full fu.

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FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKN3113 P-Ch 30V Fast Switching MOSFETs Product Summary BVDSS -30V RDSON 40mΩ ID -4.2A Description The FKN3113 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3113 meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction.


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