Document
FETek Technology Corp.
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench
technology
Description
The FKN0107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN0107 meets the RoHS and Green Product requirement with full function reliability approved.
FKN0107
P-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS -100V
RDSON 0.65Ω
ID -0.9A
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Juncti.