FKN0107

FETek Technology Corp.  Super Low Gate Charge  Excellent Cdv/dt effect decline  Green Device Available  Advanced high cell density Trench technology Description The FKN0107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN0107 meets the RoHS and Green Product requirement with full function reliability approved. FKN0107 P-Ch 100V Fast Switching MOSFETs Product Summary BVDSS -100V RDSON 0.65Ω ID -0.9A SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Juncti...