FKS3018B

FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Description The FKS3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. FKS3018B N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 3mΩ ID 24A SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA Parameter Thermal...