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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKK4101 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKK4101 meet the RoHS and Green Product requirement with full function reliability approved.
FKK4101
P-Ch 40V Fast Switching MOSFETs
Product Summary
BVDSS -40V
RDSON 70mΩ
ID -5.8A
SOT 89 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA
Parameter
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junctio.