P-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKK3101 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKK3101 meet the RoHS and Green Product requirement, with full function reliability approved.
FKK3101
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 52mΩ
ID -4A
SOT89 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating Steady State
-30 ±20 -4 -3 -202 1.323 0.843 -55 to 150 -55 to 150
Units
V V A A A W W ℃ ℃
Thermal Da...
Similar Datasheet