FKS6006

FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKS6006 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS 60V RDSON 18mΩ ID 6.3A Description The FKS6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rθ...