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FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKS0004
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 112mΩ
ID 2.5A
Description
The FKS0004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS0004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter T.