N-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKS0026
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 20mΩ
ID 8.5A
Description
The FKS0026 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
SOP8 Pin Configuration
( 5,6,7,8 ) (4)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA
P...
Similar Datasheet