P-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKS2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS2627 meet the RoHS and Green Product requirement with full function reliability approved.
FKS2627
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 9mΩ
ID -10.7A
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TA=70℃
TSTG TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-Ambient ...
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