Dual N-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect ...
Description
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKS3202 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKS3202
Dual N-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS 30V
RDSON 18mΩ
ID 7.3A
Dual SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
...
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