FKH0016

FETek Technology Corp.  Super Low Gate Charge  Excellent Cdv/dt effect decline  Green Device Available  Advanced high cell density Trench technology FKH0016 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 40mΩ ID 36A Description The FKH0016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKH0016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO263 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter ...