Dual-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
Description
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKS3907 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS3907 meet the RoHS and Green Product requirement with full function reliability approved.
FKS3907
N-Ch and P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS 30V -30V
RDSON 27mΩ 62mΩ
ID 6.2A -4A
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperatu...
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