FKQ2510

FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKQ2510 N-Ch 20V Fast Switching MOSFETs Product Summary BVDSS 20V RDSON 37mΩ ID 4.5A Description The FKQ2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications The FKQ2510 meet the RoHS and Green Product requirement with full function reliability approved. TSOP6 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Cas...