FKP3002

FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology Description The FKP3002 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications . The FKP3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. FKP3002 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 18mΩ ID 37A TO220 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Powe...