Dual N-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge ESD Protection Excellent Cdv/dt effect decli...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge ESD Protection Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKQ2724
Dual N-Ch Fast Switching MOSFETs
Product Summary
BVDSS 20V
RDSON 17mΩ
ID 7A
Description
TSOP6 Pin Configuration
The FKQ2724 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKQ2724 meet the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Rating 20
±12 7.0 5.6 45 1.25 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Thermal Data
Symbol RθJA
Paramet...
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