FKR6006

FETek Technology Corp.  Super Low Gate Charge  100% EAS Guaranteed  Excellent CdV/dt effect decline  Green Device Available  Advanced high cell density Trench technology Description The FKR6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. FKR6006 N-Ch 60V Fast Switching MOSFETs Product Summary BVDSS 60V RDSON 20mΩ ID 35A TO251 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current To...