N-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKR0008
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 310mΩ
ID 5.4A
Description
The FKR0008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR0008 meet the RoHS and Green Product requirement with full function reliability approved.
TO251 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM PD@TC=25℃ PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3
Storage Temperature Range
Operating Junction Tem...
Similar Datasheet