N-Channel MOSFET
FETek Technology Corp.
Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect ...
Description
FETek Technology Corp.
Advanced high cell density Trench technology
Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available
FKR0014
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 152mΩ
ID 9A
Description
The FKR0014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR0014 meet the RoHS and Green Product requirement with full function reliability approved.
TO251 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TC=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temper...
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