N-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKR0004
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 112mΩ
ID 12A
Description
TO251 Pin Configuration
The FKR0004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR0004 meet the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM PD@TC=25℃ PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temp...
Similar Datasheet