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FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKR0016
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 47mΩ
ID 22A
Description
TO251 Pin Configuration
The FKR0016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR0016 meet the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissip.