P-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
Description
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description The FKR3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKR3115
P-Ch 30V Fast Switching MOSFETs Product Summary
BVDSS -30V
RDSON 10.5mΩ
ID -57A
TO251 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Singl...
Similar Datasheet