P-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Excellent CdV/dt effect decline Green Device Av...
Description
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Excellent CdV/dt effect decline Green Device Available Advanced high cell density Trench
technology
FKD4115
P-Ch 40V Fast Switching MOSFETs
Product Summary
BVDSS -40V
RDSON 13mΩ
ID -52A
Description
The FKD4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Cu...
Similar Datasheet