FKD6101

FETek Technology Corp.  Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Description The FKD6101 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD6101 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. FKD6101 P-Ch 60V Fast Switching MOSFETs Product Summery BVDSS -60V RDSON 140mΩ ID -12A TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Sym...