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FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKD4903 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD4903 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
FKD4903
N-Ch and P-Ch Fast Switching MOSFETs
Product Summary
BVDSS 40V -40V
RDSON 30mΩ 45mΩ
ID 23A -20A
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation.