FKH0018A

FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKH0018A N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 22mΩ ID 58A Description The FKH0018A is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKH0018A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. TO263 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Cur...