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FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKBA8016
N-Ch 80V Fast Switching MOSFETs
Product Summary
BVDSS 75V
RDSON 12mΩ
ID 62A
Description
The FKBA8016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA8016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=70℃
IDM EAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistanc.