N-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced hig...
Description
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKBA0036
N-Ch 100V Fast Switching MOSFETs
Product Summary
BVDSS 100V
RDSON 18.5mΩ
ID 58A
Description
The FKBA0036 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA0036 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
PRPAK5x6 Pin Configuration
( 5,6,7,8 ) (4)
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4
Storage Temperature Range
Operating Junction Tem...
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