Dual N-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
Description
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKBA4400
Dual N-Ch Fast Switching MOSFETs Product Summary
BVDSS 40V 40V
RDSON 17mΩ 8.5mΩ
ID 39A 54A
Description
The FKBA4400 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA4400 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
PRPAK5X6 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Curren...
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