P-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
Description
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKBA3113
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 30mΩ
ID -31A
Description
The FKBA3113 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA3113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
PRPAK5X6 Pin Configuration
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Ran...
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