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The G1003A uses advanced tre nch technology and design to provide ex cellent RDS(ON) with low gate charge. I t can be used in a wide variety of appl ications. It is ESD protected.
● VDS = 100V,ID = 5A RDS(ON) < 145mΩ @ VGS=10V (Typ:135 mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanch e voltage and current ● Excellent pack