SPN80T06

SPN80T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/PPAK5x6-8L/TO-252-2L package design PIN CONFIGURATION TO-220-3L PPAK5x6-8L TO-252 PART MARKING 2020/04/30 V.5 Page 1 SPN80T06 N-Channel Enhancement Mode MOSFET TO-220-3L/T0-252-2L PIN DESCRIPTION Pin 1 2 3 Symbol G D S PPAK5x6-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN80T06T220TGB TO-220-3L SPN80T06T252RGB TO-252-2L SPN80T06DN8RGB PPAK5x6-8L ※ SPN80T06T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN80T06T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free ※ SPN80T06DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free Description Gate Drain Source Description Source Source Sour...