FDS9435A

FDS9435A FDS9435A 30V P-Channel PowerTrench®® MOSFET Features General Description –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.5 V This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has Low gate charge been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Fast switching speed Applications Power management Load switch Battery protection High performance trench technology for extremely low RDS(ON) High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range T...