DatasheetsPDF.com

SPN166T04 Dataheets PDF



Part Number SPN166T04
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN166T04 DatasheetSPN166T04 Datasheet (PDF)

SPN166T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast .

  SPN166T04   SPN166T04


Document
SPN166T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  45V/166A, RDS(ON)=2.9mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-251S-3L/TO-252-2L/ PPAK5x6-8L/TO-263-2L package design PIN CONFIGURATION TO-220 TO-263 TO-251 TO-252 PPAK5x6 PART MARKING 2020/04/28 Ver 5 Page 1 SPN166T04 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN166T04T220TGB TO-220-3L SPN166T04ST251TGB TO-251S-3L SPN166T04T252RGB TO-252-2L SPN166T04T262RGB TO-263-2L SPN166T04DN8RGB PPAK5x6-8L ※ SPN166T04T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T04ST251TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T04T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free ※ SPN166T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free ※ SPN166T04T262RGB : Tape& Reel ; Pb – Free ; Halogen – Free Part Marking SPN166T04 SPN166T04 SPN166T04 SPN166T04 SPN166T04 2020/04/28 Ver 5 Page 2 SPN166T04 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current (Silicon Limited) Tc=25℃ (TO-220/TO-263/TO-251/TO-252) Tc=70℃ Continuous Drain Current (Silicon Limited) Tc=25℃ (PPAK5x6) Tc=70℃ VGSS ID ID Pulsed Drain Current IDM Power Dissipation @ Tc=25℃ Power Dissipation @ Tc=25℃ Power Dissipation @ Tc=25℃ Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. ) TO-220/TO-263 TO251/TO-252 PD PPAK5x6 EAS Operating Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Case (TO-220/TO-263) RθJC Thermal Resistance-Junction to Case (TO-251/TO-252) RθJC Thermal Resistance-Junction to Case (PPAK5x6) RθJC Note : The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L Typical 45 ±20 166 118 140 89 450 104 93 83 42 -55/150 -55/150 1.2 1.35 1.5 Unit V V A A A W mJ ℃ ℃ ℃/W ℃/W ℃/W 2020/04/28 Ver 5 Page 3 SPN166T04 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS RDS(on) VDS=0V,VGS=±20V VDS=36V, VGS=0V TJ = 25 °C VDS=36V, VGS=0V TJ = 100 °C VGS=10V,ID=20A VGS=4.5V,ID=20A gfs VDS=5V,ID=20A RG VGS=0V,VDS Open, f=1MHz VSD IS=20A ,VGS =0V Qg Qg VDS=20V, VGS=10V Qgs ID = 20A Qgd Ciss Coss VDS=20V, VGS=0V f=1MHz Crss td(on) tr VDD=20V, ID=20A td(off) VGEN=10V, RG=10Ω tf Min. Typ Max. Unit 45 V 1.0 2.2 ±100 nA 1 uA 100 2.5 2.9 mΩ 3.7 4.5 65 S 1.6 Ω 0.9 1.2 V 50 25 nC 8 10 3322 1367 pF 96 14 12 nS 57 18 2020/04/28 Ver 5 Page 4 SPN166T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/28 Ver 5 Page 5 SPN166T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/28 Ver 5 Page 6 SPN166T04 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approv.


SP6801 SPN166T04 SPN125T04


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)