Document
SPN166T04
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool
FEATURES 45V/166A, RDS(ON)=2.9mΩ@VGS=10V
RDS(ON)=4.5mΩ@VGS=4.5V Super high density cell design for
extremely low RDS (ON) Exceptional on-resistance and maximum
DC current capability TO-220-3L/TO-251S-3L/TO-252-2L/
PPAK5x6-8L/TO-263-2L package design
PIN CONFIGURATION TO-220 TO-263 TO-251
TO-252
PPAK5x6
PART MARKING
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SPN166T04
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN166T04T220TGB
TO-220-3L
SPN166T04ST251TGB
TO-251S-3L
SPN166T04T252RGB
TO-252-2L
SPN166T04T262RGB
TO-263-2L
SPN166T04DN8RGB
PPAK5x6-8L
※ SPN166T04T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN166T04ST251TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN166T04T252RGB : Tape& Reel ; Pb – Free ; Halogen – Free
※ SPN166T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
※ SPN166T04T262RGB : Tape& Reel ; Pb – Free ; Halogen – Free
Part Marking
SPN166T04 SPN166T04 SPN166T04 SPN166T04 SPN166T04
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SPN166T04
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage
Continuous Drain Current (Silicon Limited) Tc=25℃
(TO-220/TO-263/TO-251/TO-252)
Tc=70℃
Continuous Drain Current (Silicon Limited) Tc=25℃
(PPAK5x6)
Tc=70℃
VGSS ID ID
Pulsed Drain Current
IDM
Power Dissipation @ Tc=25℃ Power Dissipation @ Tc=25℃
Power Dissipation @ Tc=25℃
Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. )
TO-220/TO-263
TO251/TO-252
PD
PPAK5x6
EAS
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Case (TO-220/TO-263)
RθJC
Thermal Resistance-Junction to Case (TO-251/TO-252)
RθJC
Thermal Resistance-Junction to Case (PPAK5x6)
RθJC
Note :
The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
Typical 45
±20 166 118 140 89
450 104 93 83 42
-55/150 -55/150
1.2 1.35 1.5
Unit V V
A
A
A
W
mJ ℃ ℃ ℃/W ℃/W ℃/W
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SPN166T04
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS IDSS RDS(on)
VDS=0V,VGS=±20V VDS=36V, VGS=0V TJ = 25 °C VDS=36V, VGS=0V TJ = 100 °C
VGS=10V,ID=20A
VGS=4.5V,ID=20A
gfs VDS=5V,ID=20A
RG
VGS=0V,VDS Open, f=1MHz
VSD IS=20A ,VGS =0V
Qg
Qg VDS=20V, VGS=10V Qgs ID = 20A
Qgd
Ciss
Coss
VDS=20V, VGS=0V f=1MHz
Crss
td(on)
tr VDD=20V, ID=20A td(off) VGEN=10V, RG=10Ω
tf
Min. Typ Max. Unit
45
V
1.0
2.2
±100 nA
1 uA
100
2.5 2.9 mΩ
3.7 4.5
65
S
1.6
Ω
0.9 1.2 V
50
25 nC
8
10
3322
1367
pF
96
14
12
nS
57
18
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SPN166T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN166T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN166T04
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approv.