DatasheetsPDF.com

SPN125T04 Dataheets PDF



Part Number SPN125T04
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN125T04 DatasheetSPN125T04 Datasheet (PDF)

SPN125T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast .

  SPN125T04   SPN125T04


Document
SPN125T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  45V/125A, RDS(ON)=4.5mΩ@VGS=10V  45V/125A, RDS(ON)=7.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L package design PIN CONFIGURATION TO-220 TO-220F TO-252 PPAK 5x6 PART MARKING 2020/04/30 Ver 3 Page 1 SPN125T04 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 PIN DESCRIPTION (PPAK5x6) Pin 1 2 3 4 5 6 7 8 Symbol G D S Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN125T04T220TGB TO-220-3L SPN125T04T220FTGB TO-220F-3L SPN125T04T252RGB TO-252-2L SPN125T04DN8RGB PPAK5x6-8L ※ SPN125T04T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN125T04T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN125T04T252RGB : Tube ; Pb – Free ; Halogen – Free ※ SPN125T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free Description Gate Drain Source Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN125T04 SPN125T04 SPN125T04 SPN125T04 2020/04/30 Ver 3 Page 2 SPN125T04 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) (TO-220/TO-220F/TO-252) Continuous Drain Current(TJ=150℃) (PPAK5x6) TC=25℃ TC=100℃ TC=25℃ TC=100℃ Pulsed Drain Current (TO-220/TO-220F/TO-252) Pulsed Drain Current (PPAK5x6) Power Dissipation @ TC=25℃ Power Dissipation @ TC=25℃ Power Dissipation @ TC=25℃ Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. ) TO-220 TO252/TO-220F PPAK5x6 Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case (TO-220/TO-220F) Thermal Resistance-Junction to Case (TO-252) Thermal Resistance-Junction to Case (PPAK5X6) Note : The maximum current rating is package limited at 120A for TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L Symbol VDSS VGSS ID ID IDM IDM PD EAS TJ TSTG RθJC RθJC RθJC Typical 45 ±20 125 88 101 64 300 220 104 93 83 141 -55/150 -55/150 1.2 1.35 1.5 Unit V V A A A A W mJ ℃ ℃ ℃/W ℃/W ℃/W 2020/04/30 Ver 3 Page 3 SPN125T04 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=45V, VGS=0V IDSS TJ = 25 °C VDS=45V, VGS=0V TJ = 100 °C VGS=10V,ID=20A RDS(on) VGS=4.5V,ID=20A gfs VDS=5V,ID=20A RG VGS=0V,VDS=Open, f=1MHz VSD IF=20A ,VGS =0V Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qg VDS=20V, VGS=10V Qgs ID=20A Qgd Ciss Coss VDS=20V, VGS=0V f=1MHz Crss td(on) tr VDD=20V, ID=20A td(off) VGEN=10V, RG=10Ω tf Min. Typ Max. Unit 45 V 1 1.8 2.2 ±100 nA 1 uA 100 3.5 4.5 mΩ 4.6 7.0 40 S 1.5 Ω 0.9 1.2 V 42 22 nC 4 10 2159 756 pF 118 12 10 nS 41 16 2020/04/30 Ver 3 Page 4 SPN125T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/30 Ver 3 Page 5 SPN125T04 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/04/30 Ver 3 Page 6 SPN125T04 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without.


SPN166T04 SPN125T04 SPN4842


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)