Document
SPN125T04
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN125T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool
FEATURES 45V/125A, RDS(ON)=4.5mΩ@VGS=10V 45V/125A, RDS(ON)=7.0mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L
package design
PIN CONFIGURATION TO-220 TO-220F TO-252
PPAK 5x6
PART MARKING
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SPN125T04
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
PIN DESCRIPTION (PPAK5x6) Pin 1 2 3 4 5 6 7 8
Symbol G D S
Symbol S S S G D D D D
ORDERING INFORMATION
Part Number
Package
SPN125T04T220TGB
TO-220-3L
SPN125T04T220FTGB
TO-220F-3L
SPN125T04T252RGB
TO-252-2L
SPN125T04DN8RGB
PPAK5x6-8L
※ SPN125T04T220TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN125T04T220FTGB : Tube ; Pb – Free ; Halogen – Free
※ SPN125T04T252RGB : Tube ; Pb – Free ; Halogen – Free
※ SPN125T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
Description Gate Drain Source
Description Source Source Source Gate Drain Drain Drain Drain
Part Marking SPN125T04 SPN125T04 SPN125T04 SPN125T04
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SPN125T04
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃) (TO-220/TO-220F/TO-252)
Continuous Drain Current(TJ=150℃) (PPAK5x6)
TC=25℃ TC=100℃ TC=25℃ TC=100℃
Pulsed Drain Current (TO-220/TO-220F/TO-252)
Pulsed Drain Current (PPAK5x6)
Power Dissipation @ TC=25℃ Power Dissipation @ TC=25℃
Power Dissipation @ TC=25℃
Avalanche Energy with Single Pulse ( TC=25℃, L = 0.1mH. )
TO-220 TO252/TO-220F PPAK5x6
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case (TO-220/TO-220F)
Thermal Resistance-Junction to Case (TO-252)
Thermal Resistance-Junction to Case (PPAK5X6)
Note :
The maximum current rating is package limited at 120A for TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
Symbol VDSS VGSS
ID
ID
IDM IDM
PD
EAS TJ TSTG RθJC RθJC RθJC
Typical 45
±20 125 88 101 64
300
220 104 93 83 141
-55/150 -55/150
1.2 1.35 1.5
Unit V V
A
A
A A
W
mJ ℃ ℃ ℃/W ℃/W ℃/W
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N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=45V, VGS=0V
IDSS
TJ = 25 °C VDS=45V, VGS=0V
TJ = 100 °C
VGS=10V,ID=20A RDS(on)
VGS=4.5V,ID=20A
gfs VDS=5V,ID=20A
RG
VGS=0V,VDS=Open, f=1MHz
VSD IF=20A ,VGS =0V
Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qg VDS=20V, VGS=10V Qgs ID=20A
Qgd
Ciss
Coss
VDS=20V, VGS=0V f=1MHz
Crss
td(on)
tr VDD=20V, ID=20A td(off) VGEN=10V, RG=10Ω
tf
Min. Typ Max. Unit
45
V
1
1.8 2.2
±100 nA
1 uA
100
3.5 4.5 mΩ
4.6 7.0
40
S
1.5
Ω
0.9 1.2 V
42
22 nC
4
10
2159
756
pF
118
12
10
nS
41
16
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SPN125T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN125T04
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN125T04
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without.