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SPN4842 Dataheets PDF



Part Number SPN4842
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4842 DatasheetSPN4842 Datasheet (PDF)

SPN4842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synch.

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SPN4842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  Charger Adapter  LED Lighting FEATURES  45V/6A,RDS(ON)=9.5mΩ@VGS=10V  45V/3A,RDS(ON)=12.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 3 PART MARKING Page 1 SPN4842 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4842S8RGB SOP-8 ※ SPN4842S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current TA=25℃ TA=100℃ Continuous Drain Current (Silicon Limited) TA=25℃ Symbol VDSS VGSS ID ID Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ IDM EAS IAS PD TJ TSTG RθJA Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4842 Typical 45 ±20 15 9.5 35 60 38 27 2.5 1.4 -55/150 -55/150 50 Unit V V A A A mJ A W ℃ ℃ ℃/W 2020/03/26 Ver 3 Page 2 SPN4842 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA 45 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS IDSS RDS(on) gfs VDS=0V,VGS=±20V VDS=45V,VGS=0V, TJ=25℃ VGS=10V,ID=6A VGS=4.5V,ID=3A VDS=5V,ID=6A VSD IS=13.3A,VGS =0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS=20V, VGS=10V ID=13.3A Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VDS=25V, VGS=0V f=1MHz Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD=20V, ID=13.3A,VGS=10V RG=6Ω Gate resistance Rg VGS=0V,VDS=0V, f=1MHz Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V, VGS=10V, L=0.1mH , IAS=27A , RG=25Ω , Starting TJ=25℃ 3. The data tested by pulsed, pulse width ≦300us, duty cycle ≦2%. 4. Essentially independent of operating temperature. Typ 6 8 25 31.5 3.5 9 1600 180 130 12 82 33 59 1.2 Max. Unit V 2.5 ±100 nA 1 uA 9.5 12.5 mΩ S 1.5 V nC pF nS Ω 2020/03/26 Ver 3 P.


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