SPN4842

SPN4842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  Charger Adapter  LED Lighting FEATURES  45V/6A,RDS(ON)=9.5mΩ@VGS=10V  45V/3A,RDS(ON)=12.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 3 PART MARKING Page 1 SPN4842 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4842S8RGB SOP-8 ※ SPN4842S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current TA=25℃ TA=100℃ Continuous Drain Current (Silicon Limited) TA=25℃ Symbol VDSS VGSS ID ID Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ IDM...