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SPN75T04 Dataheets PDF



Part Number SPN75T04
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN75T04 DatasheetSPN75T04 Datasheet (PDF)

SPN75T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN75T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast sw.

  SPN75T04   SPN75T04



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SPN75T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN75T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  45V/75A,RDS(ON)=9.5mΩ@VGS=10V  45V/75A,RDS(ON)=14mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220F-3L/TO-251S-3L/TO-252-2L/ PPAK5x6-8L package design PIN CONFIGURATION TO-220F TO-251 TO-252 PPAK5x6 PART MARKING 2020/04/30 Ver 4 Page 1 SPN75T04 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION (T0-220F-3L/TO-252-2L/TO-251S-3L) Pin Symbol 1 G 2 D 3 S Description Gate Drain Source PIN DESCRIPTION (PPAK5x6-8L) Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN75T04T220FTGB TO-220F-3L SPN75T04ST251TGB TO-251S-3L SPN75T04T252RGB TO-252-2L SPN75T04DN8RGB PPAK5x6-8L ※ SPN75T04T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T04ST251TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN75T04T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free ※ SPN75T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free Part Marking SPN75T04 SPN75T04 SPN75T04 SPN75T04 2020/04/30 Ver 4 Page 2 SPN75T04 N-Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current (TO-220F/TO-251/TO-252) Continuous Drain Current (PPAK5x6) TC=25℃ TC=100℃ TC=25℃ TC=100℃ VGSS ID ID Pulsed Drain Current IDM Power Dissipation @ TC=25℃ TO-220F-3L/TO-252-2L/TO-251S-3L Power Dissipation @ TC=25℃ PPAK5x6-8L PD Avalanche Energy with Single Pulse ( TC=25℃, L = 0.4mH. ) EAS Operating Junction Temperature TJ Storage Temperature Range Thermal Resistance-Junction to Case (TO-220F-3L) Thermal Resistance-Junction to Case (TO-252-2L/TO-251S-3L) Thermal Resistance-Junction to Case (PPAK5x6-8L) Note : The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L TSTG RθJC RθJC RθJC Typical 45 ±20 75 58 56 39 280 93 83 20 -55/150 -55/150 1.2 1.35 1.5 Unit V V A A A W mJ ℃ ℃ ℃/W ℃/W ℃/W 2020/04/30 Ver 4 Page 3 SPN75T04 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-S.


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