Document
SPN75T04
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN75T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool
FEATURES 45V/75A,RDS(ON)=9.5mΩ@VGS=10V 45V/75A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220F-3L/TO-251S-3L/TO-252-2L/
PPAK5x6-8L package design
PIN CONFIGURATION TO-220F TO-251 TO-252
PPAK5x6
PART MARKING
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION (T0-220F-3L/TO-252-2L/TO-251S-3L)
Pin
Symbol
1
G
2
D
3
S
Description Gate Drain Source
PIN DESCRIPTION (PPAK5x6-8L) Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN75T04T220FTGB
TO-220F-3L
SPN75T04ST251TGB
TO-251S-3L
SPN75T04T252RGB
TO-252-2L
SPN75T04DN8RGB
PPAK5x6-8L
※ SPN75T04T220FTGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T04ST251TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T04T252RGB : Tape&Reel ; Pb – Free ; Halogen – Free ※ SPN75T04DN8RGB : Tape&Reel ; Pb – Free ; Halogen - Free
Part Marking SPN75T04 SPN75T04 SPN75T04 SPN75T04
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate –Source Voltage
Continuous Drain Current (TO-220F/TO-251/TO-252)
Continuous Drain Current (PPAK5x6)
TC=25℃ TC=100℃ TC=25℃ TC=100℃
VGSS ID ID
Pulsed Drain Current
IDM
Power Dissipation @ TC=25℃ TO-220F-3L/TO-252-2L/TO-251S-3L
Power Dissipation @ TC=25℃ PPAK5x6-8L
PD
Avalanche Energy with Single Pulse ( TC=25℃, L = 0.4mH. )
EAS
Operating Junction Temperature
TJ
Storage Temperature Range
Thermal Resistance-Junction to Case (TO-220F-3L)
Thermal Resistance-Junction to Case (TO-252-2L/TO-251S-3L)
Thermal Resistance-Junction to Case (PPAK5x6-8L)
Note :
The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L
TSTG RθJC RθJC RθJC
Typical 45
±20 75 58 56 39
280 93 83 20
-55/150 -55/150
1.2 1.35 1.5
Unit V V
A
A
A W mJ ℃ ℃ ℃/W ℃/W ℃/W
2020/04/30 Ver 4
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SPN75T04
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ Max. Unit
Static Drain-S.