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SPN4844 Dataheets PDF



Part Number SPN4844
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4844 DatasheetSPN4844 Datasheet (PDF)

SPN4844 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4844 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synch.

  SPN4844   SPN4844



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SPN4844 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4844 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  Charger Adapter  LED Lighting FEATURES  45V/15A,RDS(ON)=9.5mΩ@VGS=10V  45V/8A,RDS(ON)=14mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 2 PART MARKING Page 1 SPN4844 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4844S8RGB SOP-8 ※ SPN4844S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TC=25℃ TC=100℃ TC=25℃ Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJA Part Marking SPN4844 Typical 45 ±20 13.5 8.5 50 20 3.1 -55/150 -55/150 75 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/26 Ver 2 Page 2 SPN4844 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA 45 VGS(th) VDS=VGS,ID=250uA 1.0 1.55 IGSS VDS=0V,VGS=±20V IDSS RDS(on) VDS=45V,VGS=0V,TJ=25°C VDS=45V,VGS=0V,TJ=100°C VGS=10V,ID=15A VGS=4.5V,ID=8A gfs VDS=5V,ID=10A 8 VSD IS=20A,VGS =0V 0.9 Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Gate resistance Qg 14.5 Qg VDS=20V, VGS=10V 7 Qgs ID=10A 2 Qgd 2.5 Ciss 942 Coss VDS=20V, VGS=0V f=1MHz 309 Crss 29 td(on) 6 tr VDD=20V, ID=10A,VGS=10V 5 td(off) RG=10Ω 21 tf 5 Rg VGS=0V,VDS=0V, f=1MHz 1.5 Max. Unit V 2.2 ±100 nA 1 uA 100 9.5 14 mΩ S 1.2 V nC pF nS Ω 2020/03/26 Ver 2 Page 3 SPN4844 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 4 SPN4844 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 5 SPN4844 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC .


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