Document
SPN4844
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4844 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter Charger Adapter LED Lighting
FEATURES 45V/15A,RDS(ON)=9.5mΩ@VGS=10V 45V/8A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
2020/03/26 Ver 2
PART MARKING
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SPN4844
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4844S8RGB
SOP-8
※ SPN4844S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
TC=25℃ TC=100℃
TC=25℃
Symbol VDSS VGSS
ID
IDM EAS PD TJ TSTG RθJA
Part Marking SPN4844
Typical 45
±20 13.5 8.5 50
20 3.1 -55/150 -55/150 75
Unit V V
A
A mJ W ℃ ℃ ℃/W
2020/03/26 Ver 2
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SPN4844
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min. Typ
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
45
VGS(th) VDS=VGS,ID=250uA
1.0 1.55
IGSS VDS=0V,VGS=±20V
IDSS RDS(on)
VDS=45V,VGS=0V,TJ=25°C
VDS=45V,VGS=0V,TJ=100°C VGS=10V,ID=15A VGS=4.5V,ID=8A
gfs VDS=5V,ID=10A
8
VSD IS=20A,VGS =0V
0.9
Dynamic Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Gate resistance
Qg
14.5
Qg VDS=20V, VGS=10V
7
Qgs ID=10A
2
Qgd
2.5
Ciss
942
Coss
VDS=20V, VGS=0V f=1MHz
309
Crss
29
td(on)
6
tr VDD=20V, ID=10A,VGS=10V
5
td(off) RG=10Ω
21
tf
5
Rg VGS=0V,VDS=0V, f=1MHz
1.5
Max. Unit
V 2.2
±100 nA
1 uA
100
9.5 14
mΩ
S
1.2 V
nC pF
nS Ω
2020/03/26 Ver 2
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SPN4844
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/03/26 Ver 2
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SPN4844
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/03/26 Ver 2
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SPN4844
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC .