SPN8644
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8644 is the N-Channel logic enhancement mode power field e...
SPN8644
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8644 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 45V/52A,RDS(ON)=9.5mΩ@VGS=10V 45V/52A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability PPAK3x3-8L package design
APPLICATIONS MB/VGA/Vcore POL Applications SMPS 2nd SR Charger Adapter LED Lighting Load Switch
PIN CONFIGURATION(PPAK3x3-8L)
PART MARKING
2020/05/28 Ver 2
Page 1
SPN8644
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN8644DN8RGB
PPAK3x3-8L
※ SPN8644DN8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(Silicon Limited)
Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
TA=25℃ TA=100℃
TA=25℃
Symbol VDSS VGSS
ID
IDM PD TJ TSTG RθJA...