SPN8644

SPN8644 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8644 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  45V/52A,RDS(ON)=9.5mΩ@VGS=10V  45V/52A,RDS(ON)=14mΩ@VGS=4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design APPLICATIONS  MB/VGA/Vcore  POL Applications  SMPS 2nd SR  Charger Adapter  LED Lighting  Load Switch PIN CONFIGURATION(PPAK3x3-8L) PART MARKING 2020/05/28 Ver 2 Page 1 SPN8644 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8644DN8RGB PPAK3x3-8L ※ SPN8644DN8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=100℃ TA=25℃ Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA...