SPN230T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field eff...
SPN230T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field effect
transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
FEATURES 60V/230A, RDS(ON)=2.5mΩ@VGS=10V High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current
capability TO-220-3L and TO-263-2L package design
PIN CONFIGURATION
TO-220-3L
TO-263-2L
PART MARKING
2020/05/11 Ver 3
Page 1
SPN230T06
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN230T06T220TGB
TO-220-3L
SPN230T06T262RGB
TO-263-2L
※ SPN230T06T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN230T06T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free
Part Marking
SPN230T06 SPN230T06
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Avalanche Energy, Single Pulse @ L=1mH, TA=25℃ Power Dissipatio...