SPN125T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN125T06 is the N-Channel logic enhancement mode power fie...
SPN125T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN125T06 is the N-Channel logic enhancement mode power field effect
transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS
AC/DC Synchronous Rectifier Load Switch UPS Motor Control Power Tool
FEATURES 60V/125A , RDS(ON)=4.3mΩ@VGS=10V
60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L
/PPAK5x6-8L/TO-263-2L package design
2020/04/28 Ver 5
Page 1
SPN125T06
N-Channel Enhancement Mode MOSFET
PIN CONFIGURATION TO-220 TO-220F
TO-251S-3L
TO-252-2L
TO-263-2L
PPAK5x6
PART MARKING
2020/04/28 Ver 5
Page 2
SPN125T06
N-Channel Enhancement Mode MOSFET
T0-220/TO-220F/TO-251/TO-252/TO-263 PIN DESCRIPTION
Pin
Symbol
1
G
2
D
3
S
Description Gate Drain Source
PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN125T06T220TGB
TO-220-3L
SPN125T06T220FTGB
TO-220F-3L
SPN125T06ST251TGB
TO-25...