SPN125T06

SPN125T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Motor Control  Power Tool FEATURES  60V/125A , RDS(ON)=4.3mΩ@VGS=10V 60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L /PPAK5x6-8L/TO-263-2L package design 2020/04/28 Ver 5 Page 1 SPN125T06 N-Channel Enhancement Mode MOSFET PIN CONFIGURATION TO-220 TO-220F TO-251S-3L TO-252-2L TO-263-2L PPAK5x6 PART MARKING 2020/04/28 Ver 5 Page 2 SPN125T06 N-Channel Enhancement Mode MOSFET T0-220/TO-220F/TO-251/TO-252/TO-263 PIN DESCRIPTION Pin Symbol 1 G 2 D 3 S Description Gate Drain Source PPAK5x6 PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN125T06T220TGB TO-220-3L SPN125T06T220FTGB TO-220F-3L SPN125T06ST251TGB TO-25...