Document
SPN4860
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter UPS Motor Control Power Tool
FEATURES 60V/20A,RDS(ON)=4.8mΩ@VGS=10V 60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
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PART MARKING
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SPN4860
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4860S8RGB
SOP-8
※ SPN4860S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Avalanche Energy Single Pulse(L=0.3mH, TC=25℃)
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS
ID
IDM EAS PD TJ TSTG RθJA
Part Marking SPN4860
Typical 60
±20 21 13 140 240 3.1 -55/150 -55/150 80
Unit V V
A
A mJ W ℃ ℃ ℃/W
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SPN4860
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS VDS=0V,VGS=±20V
Zero Gate Voltage Drain Current Drain-Source On-Resistance
VDS=48V,VGS=0V
IDSS
TJ=25℃ VDS=48V,VGS=0V
TJ=100℃
RDS(on)
VGS=10V,ID=20A VGS=4.5V,ID=20A
Forward Transconductance
gfs VDS=5V,ID=20A
Gate Resistance
RG VGS=0V,VDS=Open,f=1MHz
Diode Forward Voltage
VSD IS=20A,VGS=0V
Dynamic
Total Gate Charge(10V)
Qg
Total Gate Charge(4.5V) Gate-Source Charge
Qg VDS=30V,VGS=10V Qgs ID=20A
Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
Turn-Off Time
Qgd Ciss Coss Crss td(on)
VDS=30V,VGS=0V f=1MHz
tr VDD=30V, ID=20A,VGEN=10V td(off) RG=10Ω
tf
Reverse Recovery Time Reverse Recovery Charge
trr VR=30V, IF=20A, dIF/dt=300A/uS
Qrr
Min.
60 1.0
Typ
1.8
3.8 4.8 58 1.6 0.9
49 24 8 9 3250 1200 45 12 10 55 15 50 120
Max. Unit
V 2.4 ±100 nA
1 uA
100
4.8 6.3
mΩ
S
Ω
1.2 V
nC
pF
nS nS nC
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SPN4860
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4860
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4860
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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