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SPN4860 Dataheets PDF



Part Number SPN4860
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4860 DatasheetSPN4860 Datasheet (PDF)

SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Syn.

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SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  UPS  Motor Control  Power Tool FEATURES  60V/20A,RDS(ON)=4.8mΩ@VGS=10V  60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 2 PART MARKING Page 1 SPN4860 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4860S8RGB SOP-8 ※ SPN4860S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Energy Single Pulse(L=0.3mH, TC=25℃) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJA Part Marking SPN4860 Typical 60 ±20 21 13 140 240 3.1 -55/150 -55/150 80 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/26 Ver 2 Page 2 SPN4860 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS VDS=0V,VGS=±20V Zero Gate Voltage Drain Current Drain-Source On-Resistance VDS=48V,VGS=0V IDSS TJ=25℃ VDS=48V,VGS=0V TJ=100℃ RDS(on) VGS=10V,ID=20A VGS=4.5V,ID=20A Forward Transconductance gfs VDS=5V,ID=20A Gate Resistance RG VGS=0V,VDS=Open,f=1MHz Diode Forward Voltage VSD IS=20A,VGS=0V Dynamic Total Gate Charge(10V) Qg Total Gate Charge(4.5V) Gate-Source Charge Qg VDS=30V,VGS=10V Qgs ID=20A Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qgd Ciss Coss Crss td(on) VDS=30V,VGS=0V f=1MHz tr VDD=30V, ID=20A,VGEN=10V td(off) RG=10Ω tf Reverse Recovery Time Reverse Recovery Charge trr VR=30V, IF=20A, dIF/dt=300A/uS Qrr Min. 60 1.0 Typ 1.8 3.8 4.8 58 1.6 0.9 49 24 8 9 3250 1200 45 12 10 55 15 50 120 Max. Unit V 2.4 ±100 nA 1 uA 100 4.8 6.3 mΩ S Ω 1.2 V nC pF nS nS nC 2020/03/26 Ver 2 Page 3 SPN4860 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 4 SPN4860 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/26 Ver 2 Page 5 SPN4860 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/03/26 Ver 2 Page 6 .


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