SPN4860
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field e...
SPN4860
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS DC/DC Converter Load Switch Synchronous Buck Converter UPS Motor Control Power Tool
FEATURES 60V/20A,RDS(ON)=4.8mΩ@VGS=10V 60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
PIN CONFIGURATION(SOP–8)
2020/03/26 Ver 2
PART MARKING
Page 1
SPN4860
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPN4860S8RGB
SOP-8
※ SPN4860S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Avalanche Energy Single Pulse(L=0.3mH, TC=25℃)
Power Dissipation
TA=25℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol...