SPN4860

SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  UPS  Motor Control  Power Tool FEATURES  60V/20A,RDS(ON)=4.8mΩ@VGS=10V  60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 2 PART MARKING Page 1 SPN4860 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4860S8RGB SOP-8 ※ SPN4860S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Energy Single Pulse(L=0.3mH, TC=25℃) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol...