DatasheetsPDF.com

SPN65T10 Dataheets PDF



Part Number SPN65T10
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN65T10 DatasheetSPN65T10 Datasheet (PDF)

SPN65T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching spee.

  SPN65T10   SPN65T10


Document
SPN65T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  100V/68A, RDS(ON)=14mΩ@VGS=10V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L TO-252-2L PART MARKING TO-220-3L TO-220F-3L TO-263-2L TO-252-2L 2020/05/05 Ver.6 Page 1 SPN65T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN65T10T220TGB TO-220-3L SPN65T10T220FTGB TO-220F-3L SPN65T10T262RGB TO-263-2L SPN65T10T252RGB TO-252-2L ※ SPN65T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN65T10T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN65T10T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free ※ SPN65T10T252RGB : Tape&Reel ; Pb – Free ; Halogen - Free Part Marking SPN65T10 SPN65T10 SPN65T10 SPN65T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation@ Tc=25℃ TO-220/TO-263 Power Dissipation@ Tc=25℃ TO-220F/TO-252 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.1mH , ID = 23A , VDS =100V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-263) Thermal Resistance-Junction to Case (TO-252) Symbol VDSS VGSS ID IDM PD EAS TJ TSTG RθJC RθJC Typical 100 ±20 68 45 260 104 93 171 -55/150 -55/150 1.2 1.35 Unit V V A A W mJ ℃ ℃ ℃/W ℃/W 2020/05/05 Ver.6 Page 2 SPN65T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS RDS(on) VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=150 °C VGS=10V,ID=45A VSD IS=45A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=80V,VGS=4.5V ID=30A VDS=25VGS=0V f=1MHz VDD=50V,RL=1.6Ω ID=30A,VGEN=10V RG=10Ω Min. Typ Max. Unit 100 V 2.0 4.0 ±100 nA 10 uA 100 14 mΩ 1.3 V 57 12 nC 17.5 2920 261 pF 162 15 13 nS 55 21 2020/05/05 Ver.6 Page 3 SPN65T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/05 Ver.6 Page 4 SPN65T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/05/05 Ver.6 Page 5 SPN65T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/05/05 Ver.6 Page 6 .


SPN4860 SPN65T10 SPN180T10


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)