Document
SPN65T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
FEATURES
100V/68A, RDS(ON)=14mΩ@VGS=10V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L
package design
PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L
TO-252-2L
PART MARKING TO-220-3L TO-220F-3L TO-263-2L TO-252-2L
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SPN65T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G D S
Description Gate Drain Source
ORDERING INFORMATION
Part Number
Package
SPN65T10T220TGB
TO-220-3L
SPN65T10T220FTGB
TO-220F-3L
SPN65T10T262RGB
TO-263-2L
SPN65T10T252RGB
TO-252-2L
※ SPN65T10T220TGB : Tube ; Pb – Free ; Halogen – Free ※ SPN65T10T220FTGB : Tube ; Pb – Free ; Halogen – Free ※ SPN65T10T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free ※ SPN65T10T252RGB : Tape&Reel ; Pb – Free ; Halogen - Free
Part Marking SPN65T10 SPN65T10 SPN65T10 SPN65T10
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Power Dissipation@ Tc=25℃
TO-220/TO-263
Power Dissipation@ Tc=25℃
TO-220F/TO-252
Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.1mH , ID = 23A , VDS =100V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-263)
Thermal Resistance-Junction to Case (TO-252)
Symbol VDSS VGSS
ID IDM PD
EAS TJ TSTG RθJC RθJC
Typical 100 ±20 68 45 260 104 93 171
-55/150 -55/150
1.2 1.35
Unit V V
A A W
mJ ℃ ℃ ℃/W ℃/W
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SPN65T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS IDSS RDS(on)
VDS=0V,VGS=±20V
VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=150 °C VGS=10V,ID=45A
VSD IS=45A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=80V,VGS=4.5V ID=30A
VDS=25VGS=0V f=1MHz
VDD=50V,RL=1.6Ω ID=30A,VGEN=10V RG=10Ω
Min. Typ Max. Unit
100
V
2.0
4.0
±100 nA
10 uA
100
14 mΩ 1.3 V
57
12
nC
17.5
2920
261
pF
162
15
13
nS
55
21
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SPN65T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN65T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN65T10
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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