SPN180T10

SPN180T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  100V/180A, RDS(ON)=3.7mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/13 Ver 4 Page 1 SPN180T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN180T10T220TGB TO-220-3L SPN180T10T262RGB TO-263-2L ※ SPN180T10T220TGB : Tube ; Pb – Free ; Halogen - Free ※ SPN180T10T262RGB : Tape&Reel ; Pb–Free ; Halogen - Free Part Marking SPN180T10 SPN180T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=70℃ VGSS ID IDM Avalanche Energy, Single Pulse @ L=0.1...