N-Channel Enhancement Mode MOSFET
The SPN4812 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
Synchronous Buck Converter
SMPS Secondary Side Synchronous Rectifier
Super high density cell design for extremely low
Exceptional on-resistance and maximum DC
SOP–8P package design
2016/7/13 Ver 1